PART |
Description |
Maker |
HYB514175BJ-50- Q67100-Q2100 HYB514175BJ-55 HYB514 |
256k x 16-Bit EDO-DRAM 256k x 16位江户的DRAM 256k × 16-Bit Dynamic RAM(256k × 16动RAM) 256k × 16位动态随机存储器56k × 16位动态内存)
|
SIEMENS AG
|
CY7C1041V33 CY7C1041V33-15ZC CY7C1041V33-20ZC CY7C |
256K x 16 Static RAM 256K X 16 STANDARD SRAM, 17 ns, PDSO44 From old datasheet system GIGATRUE 550 CAT6 MOLDED COMPONENT, RED 7FT 256K x 16 Static RAM 256K X 16 STANDARD SRAM, 25 ns, PDSO44 256K x 16 Static RAM 256K X 16 STANDARD SRAM, 12 ns, PDSO44
|
CYPRESS[Cypress Semiconductor] Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
M27C400206 M27C4002-90XN6TR M27C4002 M27C4002-10B1 |
4 Mbit (256Kb x16) UV EPROM and OTP EPROM 256K X 16 UVPROM, 70 ns, CDIP40 256K X 16 OTPROM, 150 ns, PQCC44 256K X 16 OTPROM, 200 ns, PDIP40 256K X 16 UVPROM, 150 ns, CDIP40 256K X 16 OTPROM, 120 ns, PQCC44
|
STMICROELECTRONICS[STMicroelectronics]
|
HYB514171BJ-50- Q67100-Q727 Q67100-Q2021 HYB514171 |
256k x 16-Bit Dynamic RAM 256k × 16-Bit Dynamic RAM(256k × 16动RAM) 256k × 16位动态随机存储器56k × 16位动态内存)
|
SIEMENS AG
|
IDT71V416S10PHG IDT71V416S10PHGI IDT71V416S12PHG I |
3.3V 256K x 16 Static RAM Center Pwr & Gnd Pinout 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 12 ns, PDSO44 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 15 ns, PBGA48 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 10 ns, PDSO44
|
IDT[Integrated Device Technology] Integrated Device Technology, Inc.
|
AT27C4096 AT27C4096-12 AT27C4096-12JC AT27C4096-12 |
Dual 4-Channel Analog Multiplexer/Demultiplexer 16-SOIC -40 to 85 256K X 16 OTPROM, 70 ns, PQCC44 8-Channel Analog Multiplexer/Demultiplexer 16-TSSOP -40 to 85 256K X 16 OTPROM, 120 ns, PDSO40 Dual 4-Channel Analog Multiplexer/Demultiplexer 16-SSOP -40 to 85 256K X 16 OTPROM, 70 ns, PDIP40 4-Megabit 256K x 16 OTP EPROM 256K X 16 OTPROM, 55 ns, PQCC44 4-Megabit 256K x 16 OTP EPROM 256K X 16 OTPROM, 55 ns, PDIP40 Dual 4-Channel Analog Multiplexer/Demultiplexer 16-TVSOP -40 to 85 256K X 16 OTPROM, 90 ns, PDIP40 TV 26C 26#20 SKT WALL RECP Automotive Catalog 8-Channel Analog Multiplexer/Demultiplexer 16-SOIC -40 to 105 8-Channel Analog Multiplexer/Demultiplexer 16-VQFN -40 to 85
|
Atmel, Corp. Atmel Corp. ATMEL[ATMEL Corporation]
|
GS880E18 GS880E36T-11 GS880E18T-11 GS880E32T-11.5I |
512K X 18 CACHE SRAM, 11.5 ns, PQFP100 512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 256K X 32 CACHE SRAM, 11.5 ns, PQFP100 512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11 ns, PQFP100 512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 11 ns, PQFP100 8Mb12K x 18Bit) Synchronous Burst SRAM(8M位(512K x 18位)同步静态RAM(带2位脉冲地址计数器))
|
http:// GSI Technology, Inc.
|
29F002B-90 29F002T-12 29F002T-55 29F002T-90 29F002 |
2M-BIT [256K x 8] CMOS FLASH MEMORY 200万位[256K × 8]的CMOS闪存 2M-BIT [256K x 8] CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 70 ns, PDIP32
|
Macronix International Co., Ltd. MACRONIX INTERNATIONAL CO LTD
|
W27L02 W27L02P-70 W27L02P-90 W27L02Q-70 W27L02Q-90 |
256K X 8 ELECTRIC ALLY ERASABLE EPROM 256K X 8 EEPROM 12V, 70 ns, PQCC32
|
Winbond Electronics, Corp. Winbond Electronics Corp WINBOND[Winbond]
|
27C4096-12 27C4096-10 |
4M-BIT [512K x 8/256K x 16] CMOS EPROM 4分位[12k × 8/256K × 16]的CMOS存储
|
Macronix International Co., Ltd.
|
29F022B-90 29F022T-12 29F022T-55 29F022T-90 29F022 |
2M-BIT[256K x 8]CMOS FLASH MEMORY 200万位[256K × 8]的CMOS闪存
|
Macronix International Co., Ltd.
|
CY62146ELL-45ZSXA CY62146ELL-45ZSXI |
4-Mbit (256K x 16) Static RAM 256K X 16 STANDARD SRAM, 45 ns, PDSO44
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|